发明授权
- 专利标题： MRAM synthetic anitferomagnet structure
- 专利标题（中）： MRAM合成非铁磁结构
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申请号： US14303200申请日： 2014-06-12
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公开(公告)号： US09093637B2公开(公告)日： 2015-07-28
- 发明人: Srinivas V. Pietambaram , Bengt J. Akerman , Renu Whig , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
- 申请人： Everspin Technologies, Inc.
- 申请人地址： US AZ Chandler
- 专利权人： Everspin Technologies, Inc.
- 当前专利权人： Everspin Technologies, Inc.
- 当前专利权人地址： US AZ Chandler
- 主分类号： H01L43/10
- IPC分类号： H01L43/10 ; H01L43/08 ; H01L43/02 ; H01L27/22
摘要：
An MRAM bit (10) includes a free magnetic region (15), a fixed magnetic region (17) comprising an antiferromagnetic material, and a tunneling barrier (16) comprising a dielectric layer positioned between the free magnetic region (15) and the fixed magnetic region (17). The MRAM bit (10) avoids a pinning layer by comprising a fixed magnetic region exhibiting a well-defined high Hflop using a combination of high Hk (uniaxial anisotropy), high Hsat (saturation field), and ideal soft magnetic properties exhibiting well-defined easy and hard axes.
公开/授权文献
- US20150021606A1 MRAM SYNTHETIC ANITFEROMAGNET STRUCTURE 公开/授权日：2015-01-22
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