发明授权
- 专利标题: FePt-based sputtering target
- 专利标题(中): 基于FePt的溅射靶
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申请号: US14328016申请日: 2014-07-10
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公开(公告)号: US09095901B2公开(公告)日: 2015-08-04
- 发明人: Takanobu Miyashita , Yasuyuki Goto , Takamichi Yamamoto , Ryousuke Kushibiki , Masahiro Aono , Masahiro Nishiura
- 申请人: TANAKA KIKINZOKU KOGYO K.K.
- 申请人地址: JP Tokyo
- 专利权人: TANAKA KIKINZOKU KOGYO K.K.
- 当前专利权人: TANAKA KIKINZOKU KOGYO K.K.
- 当前专利权人地址: JP Tokyo
- 代理机构: Oliff PLC
- 优先权: JP2012-005695 20120113
- 主分类号: C23C14/34
- IPC分类号: C23C14/34 ; B22F3/12 ; B22F9/08 ; C22C1/05 ; C22C5/04 ; C22C32/00 ; G11B5/851 ; B22F9/04 ; C22C1/04 ; C22C1/10 ; H01J37/34 ; C23C14/06 ; C22C38/00 ; C22C38/16
摘要:
An FePt-based sputtering target has a structure in which an FePt-based alloy phase, a C phase containing unavoidable impurities, and a metal oxide phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities, wherein C is contained in an amount of more than 0 vol % and 20 vol % or less based on the total amount of the target, the metal oxide is contained in an amount of 10 vol % or more and less than 40 vol % based on the total amount of the target, and the total content of C and the metal oxide is 20 vol % or more and 40 vol % or less based on the total amount of the target.
公开/授权文献
- US20140318954A1 FEPT-BASED SPUTTERING TARGET 公开/授权日:2014-10-30