发明授权
US09099354B2 Transistors with various levels of threshold voltages and absence of distortions between nMOS and pMOS
有权
具有各种阈值电压水平和不存在nMOS和pMOS之间失真的晶体管
- 专利标题： Transistors with various levels of threshold voltages and absence of distortions between nMOS and pMOS
- 专利标题（中）： 具有各种阈值电压水平和不存在nMOS和pMOS之间失真的晶体管
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申请号： US14309385申请日： 2014-06-19
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公开(公告)号： US09099354B2公开(公告)日： 2015-08-04
- 发明人: Olivier Weber , Nicolas Planes , Rossella Ranica
- 申请人： Commissariat a l'energie atomique et aux energies alternatives , STMicroelectronics (Crolles 2) SAS
- 申请人地址： FR Paris FR Crolles
- 专利权人： Commissariat à l'énergie atomique et aux énergies alternatives,STMicroelectronics (Crolles 2) SAS
- 当前专利权人： Commissariat à l'énergie atomique et aux énergies alternatives,STMicroelectronics (Crolles 2) SAS
- 当前专利权人地址： FR Paris FR Crolles
- 代理机构： Occhiuti & Rohlicek LLP
- 优先权： FR1355796 20130619
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L27/092
摘要：
The invention relates to an integrated circuit comprising a semi-conducting substrate and first and second cells. Each cell comprises first and second transistors of nMOS and pMOS type including first and second gate stacks including a gate metal. There are first and second ground planes under the first and second transistors and an oxide layer extending between the transistors and the ground planes. The gate metals of the nMOS and of a pMOS exhibit a first work function and the gate metal of the other pMOS exhibiting a second work function greater than the first work function. The difference between the work functions is between 55 and 85 meV and the first work function Wf1 satisfies the relation Wfmg−0.04−0.005*Xge
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