Invention Grant
US09099380B2 Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting device
有权
形成用于超陡逆行井场效应晶体管和所产生的器件的阶跃掺杂沟道分布的方法
- Patent Title: Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting device
- Patent Title (中): 形成用于超陡逆行井场效应晶体管和所产生的器件的阶跃掺杂沟道分布的方法
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Application No.: US14511811Application Date: 2014-10-10
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Publication No.: US09099380B2Publication Date: 2015-08-04
- Inventor: Vara Govindeswara Reddy Vakada , Laegu Kang , Michael P. Ganz , Yi Qi , Puneet Khanna , Sri Charan Vemula , Srikanth Samavedam
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H01L29/167
- IPC: H01L29/167 ; H01L29/04 ; H01L29/16 ; H01L29/66 ; H01L27/088
Abstract:
A methodology enabling the formation of steep channel profiles for devices, such as SSRW FETs, having a resultant channel profiles that enables suppression of threshold voltage variation and the resulting device are disclosed. Embodiments include providing STI regions in a silicon wafer; performing a deep well implantation of a dopant into the silicon wafer between STI regions; forming a recess in the doped silicon wafer between the STI regions; performing a shallow well implantation of the dopant into the silicon wafer in the recess; and forming Si:C on the doped silicon wafer in the recess.
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