发明授权
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US14070949申请日： 2013-11-04
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公开(公告)号： US09099466B2公开(公告)日： 2015-08-04
- 发明人: Toshihiko Miyazaki
- 申请人： Renesas Electronics Corporation
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Foley & Lardner LLP
- 优先权： JP2012-246458 20121108
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L23/522 ; H01L23/532 ; H01L23/528 ; H01L27/115 ; H01L49/02 ; H01L21/768
摘要：
Provided are a semiconductor device including an oscillator and a manufacturing method thereof, in which cost is low and design flexibility is high. The semiconductor device includes a wiring structure region and an oscillator region. The semiconductor device also includes, in the oscillator region, a metal resistive element as the same layer as a conducting film over uppermost metal wiring in the wiring structure region.
公开/授权文献
- US20140125421A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2014-05-08
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