发明授权
- 专利标题: Semiconductor device and manufacturing method thereof
- 专利标题(中): 半导体装置及其制造方法
-
申请号: US12542068申请日: 2009-08-17
-
公开(公告)号: US09099562B2公开(公告)日: 2015-08-04
- 发明人: Kengo Akimoto , Tatsuya Honda , Norihito Sone
- 申请人: Kengo Akimoto , Tatsuya Honda , Norihito Sone
- 申请人地址: JP
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP
- 代理机构: Husch Blackwell LLP
- 优先权: JP2005-283782 20050929
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L29/786 ; H01L27/12
摘要:
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
公开/授权文献
- US20090305461A1 Semiconductor Device And Manufacturing Method Thereof 公开/授权日:2009-12-10
信息查询
IPC分类: