发明授权
- 专利标题： Heterojunction photovoltaic device and fabrication method
- 专利标题（中）： 异质结光伏器件及其制造方法
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申请号： US13194301申请日： 2011-07-29
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公开(公告)号： US09099596B2公开(公告)日： 2015-08-04
- 发明人: Stephen W. Bedell , Keith E. Fogel , Bahman Hekmatshoar-Tabari , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
- 申请人： Stephen W. Bedell , Keith E. Fogel , Bahman Hekmatshoar-Tabari , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Louis J. Percello
- 主分类号： H01L31/0745
- IPC分类号： H01L31/0745 ; H01L31/18 ; H01L31/0312 ; H01L31/0747 ; H01L31/0725 ; H01L31/078 ; H01L31/20
摘要：
A photovoltaic device and method include a doped germanium-containing substrate, an emitter contact coupled to the substrate on a first side and a back contact coupled to the substrate on a side opposite the first side. The emitter includes at least one doped layer of an opposite conductivity type as that of the substrate and the back contact includes at least one doped layer of the same conductivity type as that of the substrate. The at least one doped layer of the emitter contact or the at least one doped layer of the back contact is in direct contact with the substrate, and the at least one doped layer of the emitter contact or the back contact includes an n-type material having an electron affinity smaller than that of the substrate, or a p-type material having a hole affinity larger than that of the substrate.