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US09104047B2 Electro-optical phase shifter having a low absorption coefficient 有权
具有低吸收系数的电光移相器

Electro-optical phase shifter having a low absorption coefficient
Abstract:
A semiconductor electro-optical phase shifter may include a central zone configured to be placed in an optical waveguide and doped at a first conductivity type, a first lateral zone adjacent a first face of the central region and doped at a second conductivity type, and a second lateral zone adjacent a second face of the central zone and doped at the second conductivity type.
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