Invention Grant
- Patent Title: Nonvolatile memory device and error correction methods thereof
- Patent Title (中): 非易失性存储器件及其纠错方法
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Application No.: US13788592Application Date: 2013-03-07
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Publication No.: US09105359B2Publication Date: 2015-08-11
- Inventor: Seonghyeog Choi , Junjin Kong , Changkyu Seol , Hong Rak Son
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2012-0059954 20120604
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C29/50 ; G06F11/10 ; G11C29/04

Abstract:
A data processing method is provided for processing data read from a nonvolatile memory. The data processing method includes receiving first bit data from the nonvolatile memory at a memory controller, and performing erasure decoding based on the first bit data and second bit data stored in the memory controller. The first bit data indicates a memory cell that is erasure, and the second bit data is read using a read voltage during previous error correction decoding.
Public/Granted literature
- US20130326296A1 NONVOLATILE MEMORY DEVICE AND ERROR CORRECTION METHODS THEREOF Public/Granted day:2013-12-05
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