发明授权
- 专利标题： Three-dimensional non-volatile memory device, memory system including the same, and method of manufacturing the same
- 专利标题（中）： 三维非易失性存储器件，包括其的存储器系统及其制造方法
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申请号： US13601121申请日： 2012-08-31
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公开(公告)号： US09105514B2公开(公告)日： 2015-08-11
- 发明人: Hack Seob Shin
- 申请人： Hack Seob Shin
- 申请人地址： KR Gyeonggi-do
- 专利权人： SK Hynix Inc.
- 当前专利权人： SK Hynix Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： William Park & Asssociates Ltd.
- 优先权： KR10-2011-0108916 20111024
- 主分类号： G11C5/02
- IPC分类号： G11C5/02 ; H01L27/115
摘要：
A 3D non-volatile memory device including a substrate that includes a first region and a second region; a pipe channel film that is formed on the substrate in the first region; a pipe gate that substantially encloses the pipe channel film; and a driving gate that is formed on the substrate in the second region and has at least one dummy pattern.
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