Invention Grant
US09105526B2 High productivity combinatorial material screening for metal oxide films 有权
用于金属氧化物膜的高生产率组合材料筛选

High productivity combinatorial material screening for metal oxide films
Abstract:
Methods for HPC techniques are applied to the processing of site-isolated regions (SIR) on a substrate to form at least a portion of a TFT device used in display applications. The processing may be applied to at least one of gate dielectric deposition, gate dielectric patterning, metal-based semiconductor (e.g. ZnOx, ZnSnOx, ZnInOx, or ZnGaOx) deposition, metal-based semiconductor (e.g. ZnOx, ZnSnOx, ZnInOx, or ZnGaOx) patterning, etch stop deposition, etch stop patterning, source/drain deposition, or source/drain patterning. The SIRs may be defined during the deposition process with uniform deposition within each SIR or the SIRs may be defined subsequent to the deposition of layers wherein the layers are deposited with a gradient in one or more properties across the substrate.
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