发明授权
- 专利标题: High Productivity Combinatorial material screening for stable, high-mobility non-silicon thin film transistors
- 专利标题(中): 高生产率组合材料筛选稳定的高迁移率非硅薄膜晶体管
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申请号: US14135086申请日: 2013-12-19
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公开(公告)号: US09105527B2公开(公告)日: 2015-08-11
- 发明人: Jeroen Van Duren , Sang Lee , Minh Huu Le
- 申请人: Intermolecular, Inc.
- 申请人地址: US CA San Jose
- 专利权人: Intermolecular, Inc.
- 当前专利权人: Intermolecular, Inc.
- 当前专利权人地址: US CA San Jose
- 主分类号: H01L21/16
- IPC分类号: H01L21/16 ; H01L27/12 ; H01L21/02 ; H01L21/465 ; H01L21/66
摘要:
Methods for HPC techniques are applied to the processing of site-isolated regions (SIR) on a substrate to form at least a portion of a TFT device used in display applications. The processing may be applied to at least one of gate dielectric deposition, gate dielectric patterning, metal-based semiconductor deposition, metal-based patterning, etch stop deposition, etch stop patterning, source/drain deposition, or source/drain patterning. The SIRs may be defined during the deposition process with uniform deposition within each SIR or the SIRs may be defined subsequent to the deposition of layers wherein the layers are deposited with a gradient in one or more properties across the substrate.