Invention Grant
- Patent Title: Method for producing thin semiconductor components
- Patent Title (中): 薄半导体元件的制造方法
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Application No.: US14352676Application Date: 2012-09-18
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Publication No.: US09105645B2Publication Date: 2015-08-11
- Inventor: Bernhard Stering , Jörg Siegert , Bernhard Löffler
- Applicant: ams AG
- Applicant Address: AT Unterpremstaetten
- Assignee: ams AG
- Current Assignee: ams AG
- Current Assignee Address: AT Unterpremstaetten
- Agency: McDermott Will & Emery LLP
- Priority: DE102011116409 20111019
- International Application: PCT/EP2012/068344 WO 20120918
- International Announcement: WO2013/056936 WO 20130425
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L23/544 ; H01L21/768 ; H01L21/683
Abstract:
A semiconductor substrate (1) is provided with a structure (3) on an upper side (2), and an additional substrate (4) provided for handling the semiconductor substrate is likewise structured on an upper side (5). The structuring of the additional substrate takes place in at least partial correspondence with the structure of the semiconductor substrate. The structured upper sides of the semiconductor substrate and the additional substrate are positioned such that they face one another and are permanently connected to one another. Subsequently, the semiconductor substrate is thinned from the rear side (6), and the additional substrate is removed at least to such a degree that the structure of the semiconductor substrate is exposed to the extent required for the further use.
Public/Granted literature
- US20140349462A1 METHOD FOR PRODUCING THIN SEMICONDUCTOR COMPONENTS Public/Granted day:2014-11-27
Information query
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