Invention Grant
- Patent Title: Methods for reproducible flash layer deposition
- Patent Title (中): 可重复闪蒸层沉积的方法
-
Application No.: US13731548Application Date: 2012-12-31
-
Publication No.: US09105646B2Publication Date: 2015-08-11
- Inventor: Sandra G. Malhotra , Hiroyuki Ode , Xiangxin Rui
- Applicant: Intermolecular, Inc. , Elpida Memory, Inc
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L49/02
Abstract:
A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a flash layer between the dielectric layer and the first electrode layer. A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a capping layer between the dielectric layer and the second electrode layer. The flash layer and the capping layer can be formed using an atomic layer deposition (ALD) technique. The precursor materials used for forming the flash layer and the capping layer are selected such they include at least one metal-oxygen bond. Additionally, the precursor materials are selected to also include “bulky” ligands.
Public/Granted literature
- US20140183695A1 Methods for Reproducible Flash Layer Deposition Public/Granted day:2014-07-03
Information query
IPC分类:
