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US09105667B2 Semiconductor device having polysilicon mask layer 有权
具有多晶硅掩模层的半导体器件

Semiconductor device having polysilicon mask layer
摘要：
A semiconductor device includes a first semiconductor layer, a second semiconductor layer and a third semiconductor layer. The second semiconductor layer is formed over the first semiconductor layer and includes a recess in a vertical direction towards the first semiconductor layer. The third semiconductor layer is formed in the recess of the second semiconductor layer and includes a seam or void in the recess.
摘要（中）：

半导体器件包括第一半导体层，第二半导体层和第三半导体层。 第二半导体层形成在第一半导体层之上，并且包括在朝向第一半导体层的垂直方向上的凹部。 第三半导体层形成在第二半导体层的凹部中并且在凹部中包括接缝或空隙。

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