发明授权
- 专利标题： Microelectronic structure including air gap
- 专利标题（中）： 微电子结构包括气隙
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申请号： US13614563申请日： 2012-09-13
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公开(公告)号： US09105693B2公开(公告)日： 2015-08-11
- 发明人: Daniel C. Edelstein , David V. Horak , Elbert E. Huang , Satyanarayana V. Nitta , Takeshi Nogami , Shom Ponoth , Terry A. Spooner
- 申请人： Daniel C. Edelstein , David V. Horak , Elbert E. Huang , Satyanarayana V. Nitta , Takeshi Nogami , Shom Ponoth , Terry A. Spooner
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Vazken Alexanian
- 主分类号： H01L29/40
- IPC分类号： H01L29/40 ; H01L21/4763 ; H01L21/768
摘要：
A microelectronic structure and a method for fabricating the microelectronic structure provide a plurality of voids interposed between a plurality of conductor layers. The plurality of voids is also located between a liner layer and an inter-level dielectric layer. The voids provide for enhanced electrical performance of the microelectronic structure.
公开/授权文献
- US20130012017A1 MICROELECTRONIC STRUCTURE INCLUDING AIR GAP 公开/授权日：2013-01-10