Invention Grant
- Patent Title: Method for fabricating semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14286170Application Date: 2014-05-23
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Publication No.: US09105694B2Publication Date: 2015-08-11
- Inventor: Jong-Ho Lee , Min-Keun Kwak , Bum-Joon Youn , Sung-Won Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2013-0074695 20130627
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/768 ; H01L29/423 ; H01L21/8234 ; H01L27/108 ; H01L29/66
Abstract:
A method for making a semiconductor device includes forming a trench in a first layer on a substrate. A conductive layer having a pattern is formed in the trench. A first metal gate electrode is formed on the conductive layer, and a second metal gate electrode is formed on the first metal gate electrode. The first and second metal gate electrodes at least partially conform to the pattern of the conductive layer. Widths of first surfaces of the first and second metal gate electrodes are different from respective widths of second surfaces of the first and second metal gate electrodes as a result of the pattern.
Public/Granted literature
- US20150004783A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2015-01-01
Information query
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