Invention Grant
- Patent Title: Junction barrier Schottky diode and manufacturing method thereof
- Patent Title (中): 交联势垒肖特基二极管及其制造方法
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Application No.: US14040670Application Date: 2013-09-28
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Publication No.: US09105757B2Publication Date: 2015-08-11
- Inventor: Chih-Fang Huang , Tsung-Yi Huang , Chien-Wei Chiu , Tsung-Yu Yang , Ting-Fu Chang , Tsung-Chieh Hsiao , Ya-Hsien Liu , Po-Chin Peng
- Applicant: Chih-Fang Huang , Tsung-Yi Huang , Chien-Wei Chiu , Tsung-Yu Yang , Ting-Fu Chang , Tsung-Chieh Hsiao , Ya-Hsien Liu , Po-Chin Peng
- Applicant Address: TW Chupei, HsinChu
- Assignee: Richtek Technology Corporation, R.O.C.
- Current Assignee: Richtek Technology Corporation, R.O.C.
- Current Assignee Address: TW Chupei, HsinChu
- Agency: Tung & Associates
- Priority: TW102125659A 20130718
- Main IPC: H01L29/872
- IPC: H01L29/872 ; H01L29/66 ; H01L29/868 ; H01L29/06 ; H01L29/20 ; H01L29/205
Abstract:
The present invention discloses a junction barrier Schottky (JBS) diode and a manufacturing method thereof. The JBS diode includes: an N-type gallium nitride (GaN) substrate; an aluminum gallium nitride (AlGaN) barrier layer, which is formed on the N-type GaN substrate; a P-type gallium nitride (GaN) layer, which is formed on or above the N-type GaN substrate; an anode conductive layer, which is formed at least partially on the AlGaN barrier layer, wherein a Schottky contact is formed between part of the anode conductive layer and the AlGaN barrier layer; and a cathode conductive layer, which is formed on the N-type GaN substrate, wherein an ohmic contact is formed between the cathode conductive layer and the N-type GaN substrate, and the cathode conductive layer is not directly connected to the anode conductive layer.
Public/Granted literature
- US20150021615A1 JUNCTION BARRIER SCHOTTKY DIODE AND MANUFACTURING METHOD THEREOF Public/Granted day:2015-01-22
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