发明授权
- 专利标题： Junction barrier Schottky diode and manufacturing method thereof
- 专利标题（中）： 交联势垒肖特基二极管及其制造方法
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申请号： US14040670申请日： 2013-09-28
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公开(公告)号： US09105757B2公开(公告)日： 2015-08-11
- 发明人: Chih-Fang Huang , Tsung-Yi Huang , Chien-Wei Chiu , Tsung-Yu Yang , Ting-Fu Chang , Tsung-Chieh Hsiao , Ya-Hsien Liu , Po-Chin Peng
- 申请人： Chih-Fang Huang , Tsung-Yi Huang , Chien-Wei Chiu , Tsung-Yu Yang , Ting-Fu Chang , Tsung-Chieh Hsiao , Ya-Hsien Liu , Po-Chin Peng
- 申请人地址： TW Chupei, HsinChu
- 专利权人： Richtek Technology Corporation, R.O.C.
- 当前专利权人： Richtek Technology Corporation, R.O.C.
- 当前专利权人地址： TW Chupei, HsinChu
- 代理机构： Tung & Associates
- 优先权： TW102125659A 20130718
- 主分类号： H01L29/872
- IPC分类号： H01L29/872 ; H01L29/66 ; H01L29/868 ; H01L29/06 ; H01L29/20 ; H01L29/205
摘要：
The present invention discloses a junction barrier Schottky (JBS) diode and a manufacturing method thereof. The JBS diode includes: an N-type gallium nitride (GaN) substrate; an aluminum gallium nitride (AlGaN) barrier layer, which is formed on the N-type GaN substrate; a P-type gallium nitride (GaN) layer, which is formed on or above the N-type GaN substrate; an anode conductive layer, which is formed at least partially on the AlGaN barrier layer, wherein a Schottky contact is formed between part of the anode conductive layer and the AlGaN barrier layer; and a cathode conductive layer, which is formed on the N-type GaN substrate, wherein an ohmic contact is formed between the cathode conductive layer and the N-type GaN substrate, and the cathode conductive layer is not directly connected to the anode conductive layer.
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