Invention Grant
- Patent Title: Light-emitting element, light-emitting device, and manufacturing method of light-emitting element
- Patent Title (中): 发光元件,发光元件及发光元件的制造方法
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Application No.: US14185508Application Date: 2014-02-20
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Publication No.: US09105879B2Publication Date: 2015-08-11
- Inventor: Kohei Yokoyama , Hisao Ikeda
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2011-054822 20110311
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L51/56 ; H01L51/52 ; H01L51/00

Abstract:
Provided is a highly reliable light-emitting element in which damage to an EL layer is reduced even when an auxiliary electrode for an upper electrode is provided. Further, a highly reliable light-emitting device in which luminance unevenness is suppressed is provided. The light-emitting element includes a first electrode; an insulating layer over the first electrode; an auxiliary electrode having a projection and a depression on a surface, over the insulating layer; a layer containing a light-emitting organic compound over the first electrode and the auxiliary electrode; and a second electrode over the layer containing the light-emitting organic compound. At least part of the auxiliary electrode is electrically connected to the second electrode.
Public/Granted literature
- US20140170793A1 Light-Emitting Element, Light-Emitting Device, and Manufacturing Method of Light-Emitting Element Public/Granted day:2014-06-19
Information query
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