Invention Grant
- Patent Title: Method for manufacturing an integrated circuit and an integrated circuit
- Patent Title (中): 集成电路和集成电路的制造方法
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Application No.: US13769886Application Date: 2013-02-19
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Publication No.: US09107335B2Publication Date: 2015-08-11
- Inventor: Marko Lemke , Mirko Vogt , Stefan Tegen
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Main IPC: H05K1/16
- IPC: H05K1/16 ; H05K1/18 ; H01M4/82 ; H05K13/00 ; H05K1/02 ; H01G9/15 ; H01L23/58 ; H01L27/01 ; H01G11/84

Abstract:
A method for manufacturing an integrated circuit may include forming an electronic circuit in or above a carrier; forming at least one metallization layer structure configured to electrically connect the electronic circuit; and forming a solid state electrolyte battery at least partially in the at least one metallization layer structure, wherein the solid state electrolyte battery is electrically connected to the electronic circuit.
Public/Granted literature
- US20140233200A1 METHOD FOR MANUFACTURING AN INTEGRATED CIRCUIT AND AN INTEGRATED CIRCUIT Public/Granted day:2014-08-21
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