Invention Grant
- Patent Title: Method for fabricating an amplification gap of an avalanche particle detector
- Patent Title (中): 制造雪崩粒子检测器的放大间隙的方法
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Application No.: US13503211Application Date: 2010-09-17
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Publication No.: US09111737B2Publication Date: 2015-08-18
- Inventor: Ioannis Giomataris , Rui De Oliveira
- Applicant: Ioannis Giomataris , Rui De Oliveira
- Applicant Address: CH Geneva FR Gif-Sur-Yvette
- Assignee: CERN—European Organization for Nuclear Research,CEA
- Current Assignee: CERN—European Organization for Nuclear Research,CEA
- Current Assignee Address: CH Geneva FR Gif-Sur-Yvette
- Agency: Sunstein Kann Murphy & Timbers LLP
- Priority: EP09290825 20091028
- International Application: PCT/EP2010/005729 WO 20100917
- International Announcement: WO2011/050884 WO 20110505
- Main IPC: H05K13/00
- IPC: H05K13/00 ; H01J47/06

Abstract:
The invention relates to an improved method for fabricating the amplification gap of an avalanche particle detector in which two parallel electrodes are spaced apart by dielectric spacer elements. A foil including a bulk layer made of dielectric material sandwiched by two mutually parallel metallic electrodes is provided, and holes are formed in one of the metallic layers by means of photolithography. The amplification gap is then formed in the bulk layer by means of carefully controlled etching of the bulk material through the holes formed in one of the metallic layers. The invention not only provides a simplified fabrication process, but also results in a detector with enhanced spatial and energy resolution.
Public/Granted literature
- US20120264064A1 Method for fabricating an amplification gap of an avalanche particle detector Public/Granted day:2012-10-18
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