Over-voltage protection of gallium nitride semiconductor devices

Invention Grant

US09111750B2 Over-voltage protection of gallium nitride semiconductor devices 有权

Title translation: 氮化镓半导体器件的过电压保护

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Patent Title: Over-voltage protection of gallium nitride semiconductor devices
Patent Title (中): 氮化镓半导体器件的过电压保护
Application No.: US13931363

Application Date: 2013-06-28
Publication No.: US09111750B2

Publication Date: 2015-08-18
Inventor: Avinash Srikrishnan Kashyap , Peter Micah Sandvik , Rui Zhou
Applicant: General Electric Company
Applicant Address: US NY Niskayuna
Assignee: General Electric Company
Current Assignee: General Electric Company
Current Assignee Address: US NY Niskayuna
Agent Scott J. Asmus
Main IPC: H01L21/8232
IPC: H01L21/8232 ; H01L29/267 ; H01L27/02 ; H01L21/82 ; H01L21/8252 ; H01L27/06

Over-voltage protection of gallium nitride semiconductor devices

Abstract:

A monolithically integrated semiconductor assembly is presented. The semiconductor assembly includes a substrate including silicon carbide (SiC), and gallium nitride (GaN) semiconductor device is fabricated on the substrate. The semiconductor assembly further includes at least one transient voltage suppressor (TVS) structure fabricated in or on the substrate, wherein the TVS structure is in electrical contact with the GaN semiconductor device. The TVS structure is configured to operate in a punch-through mode, an avalanche mode, or combinations thereof, when an applied voltage across the GaN semiconductor device is greater than a threshold voltage. Methods of making a monolithically integrated semiconductor assembly are also presented.

Abstract(Chinese):

提出了一种单片集成半导体组件。半导体组件包括包含碳化硅（SiC）的衬底，并且在衬底上制造氮化镓（GaN）半导体器件。半导体组件还包括在衬底中或衬底上制造的至少一个瞬态电压抑制器（TVS）结构，其中TVS结构与GaN半导体器件电接触。当跨越GaN半导体器件的施加电压大于阈值电压时，TVS结构被配置为以穿通模式，雪崩模式或其组合工作。还提出了制造单片集成半导体组件的方法。

Public/Granted literature

US20150001551A1 OVER-VOLTAGE PROTECTION OF GALLIUM NITRIDE SEMICONDUCTOR DEVICES Public/Granted day:2015-01-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺