Invention Grant
- Patent Title: Copper interconnect with CVD liner and metallic cap
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Application No.: US14538944Application Date: 2014-11-12
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Publication No.: US09111938B2Publication Date: 2015-08-18
- Inventor: Frieder H. Baumann , Tibor Bolom , Chao-Kun Hu , Koichi Motoyama , Chengyu Niu , Andrew H. Simon
- Applicant: International Business Machines Corporation , GLOBALFOUNDRIES Inc. , Renesas Electronic Corporation , STMICROELECTRONICS, INC.
- Applicant Address: US NY Armonk KY Grand Cayman Islands JP Kanagawa US TX Coppell
- Assignee: International Business Machines Corporation,GLOBALFOUNDRIES, INC.,Renesas Electronics Corporation,STMICROELECTRONICS, INC.
- Current Assignee: International Business Machines Corporation,GLOBALFOUNDRIES, INC.,Renesas Electronics Corporation,STMICROELECTRONICS, INC.
- Current Assignee Address: US NY Armonk KY Grand Cayman Islands JP Kanagawa US TX Coppell
- Agent L. Jeffrey Kelly; Yuanmin Cai
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L21/768
Abstract:
A structure having a diffusion barrier positioned adjacent to a sidewall and a bottom of an opening being etched in a layer of dielectric material. The structure also having a metal liner positioned directly on top of the diffusion barrier, a seed layer positioned directly on top of the metal liner, wherein the seed layer is made from a material comprising copper, a copper material positioned directly on top of the seed layer, a metallic cap positioned directly on top of and selective to the copper material, and a capping layer positioned directly on top of and adjacent to the metallic cap.
Public/Granted literature
- US20150061135A1 COPPER INTERCONNECT WITH CVD LINER AND METALLIC CAP Public/Granted day:2015-03-05
Information query
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