发明授权
- 专利标题： Insulated gate bipolar transistor including emitter short regions
- 专利标题（中）： 绝缘栅双极晶体管包括发射极短区域
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申请号： US13850798申请日： 2013-03-26
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公开(公告)号： US09111989B2公开(公告)日： 2015-08-18
- 发明人: Stephan Voss , Erich Griebl , Alexander Breymesser
- 申请人： Infineon Technologies Austria AG
- 申请人地址： AT Villach
- 专利权人： Infineon Technologies Austria AG
- 当前专利权人： Infineon Technologies Austria AG
- 当前专利权人地址： AT Villach
- 代理机构： Murphy, Bilak & Homiller, PLLC
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; H01L29/06 ; H01L29/74 ; H01L29/08 ; H01L29/10 ; H01L29/70
摘要：
A semiconductor device includes an IGBT having a semiconductor body including a transistor cell array in a first area. A junction termination structure is in a second area surrounding the transistor cell array at a first side of the semiconductor body. An emitter region of a first conductivity type is at a second side of the semiconductor body opposite the first side. The device further includes a diode. One of the diode anode and cathode includes the body region. The other one of the anode and the cathode includes a plurality of distinct first emitter short regions of a second conductivity type at the second side facing the transistor cell array, and at least one second emitter short region of the second conductivity type at the second side facing the junction termination structure. The at least one second emitter short region is distinct from the first emitter short regions.
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