发明授权
US09112039B2 Field-effect transistor, display element, image display device, and system
有权
场效应晶体管，显示元件，图像显示装置和系统
- 专利标题： Field-effect transistor, display element, image display device, and system
- 专利标题（中）： 场效应晶体管，显示元件，图像显示装置和系统
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申请号： US14312950申请日： 2014-06-24
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公开(公告)号： US09112039B2公开(公告)日： 2015-08-18
- 发明人: Naoyuki Ueda , Yuki Nakamura , Shinji Matsumoto , Yuji Sone , Mikiko Takada , Ryoichi Saotome , Sadanori Arae , Yukiko Abe
- 申请人： Naoyuki Ueda , Yuki Nakamura , Shinji Matsumoto , Yuji Sone , Mikiko Takada , Ryoichi Saotome , Sadanori Arae , Yukiko Abe
- 申请人地址： JP Tokyo
- 专利权人： RICOH COMPANY, LTD.
- 当前专利权人： RICOH COMPANY, LTD.
- 当前专利权人地址： JP Tokyo
- 代理机构： Cooper & Dunham LLP
- 优先权： JP2013-136422 20130628; JP2014-095182 20140502
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/786 ; H01L27/12 ; H01L29/04 ; H01L29/24
摘要：
A field-effect transistor, which contains: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode, which are configured to extract electric current; an active layer formed of a n-type oxide semiconductor, provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein the n-type oxide semiconductor is a triclinic crystal compound, a monoclinic crystal compound, or a trigonal crystal compound, each of which is substitutionally doped with at least one dopant selected from the group consisting of a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, and a hexavalent cation, and wherein a valence of the dopant is greater than a valence of a metal ion constituting the n-type oxide semiconductor, excluding the dopant.
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