发明授权
- 专利标题: Reduced stress high voltage word line driver
- 专利标题(中): 减压应力高电压字线驱动器
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申请号: US13887508申请日: 2013-05-06
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公开(公告)号: US09117547B2公开(公告)日: 2015-08-25
- 发明人: John E. Barth, Jr.
- 申请人: International Business Machines Corporation
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 Isaac J. Gooshaw
- 主分类号: G11C11/24
- IPC分类号: G11C11/24 ; G11C7/00 ; G11C5/14 ; G11C8/00 ; G11C11/408
摘要:
Exemplary embodiments of the present invention disclose a method and system for asserting a voltage transition from a low voltage to a high voltage with a voltage difference between the low and high voltages on a word line with a word line driver logic that is composed of thin-oxide MOS transistors, wherein the thin-oxide MOS transistors experience less than the voltage difference on the word line between any two of a source, a drain, and a gate. In a step, charging the word line from the low voltage to an intermediate voltage level. In another step, charging the word line to the high voltage from the intermediate voltage level.
公开/授权文献
- US20140328122A1 REDUCED STRESS HIGH VOLTAGE WORD LINE DRIVER 公开/授权日:2014-11-06
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