发明授权
US09117688B2 Semiconductor device, inverter device provided with semiconductor device, and in-vehicle rotating electrical machine provided with semiconductor device and inverter device
有权
半导体装置，设置有半导体装置的逆变器装置以及设置有半导体装置和逆变装置的车载旋转电机
- 专利标题： Semiconductor device, inverter device provided with semiconductor device, and in-vehicle rotating electrical machine provided with semiconductor device and inverter device
- 专利标题（中）： 半导体装置，设置有半导体装置的逆变器装置以及设置有半导体装置和逆变装置的车载旋转电机
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申请号： US13985780申请日： 2011-04-18
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公开(公告)号： US09117688B2公开(公告)日： 2015-08-25
- 发明人: Takuya Oga , Masaki Kato , Tsuyoshi Sugihara
- 申请人： Takuya Oga , Masaki Kato , Tsuyoshi Sugihara
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Sughrue Mion, PLLC
- 代理商 Richard C. Turner
- 国际申请： PCT/JP2011/002253 WO 20110418
- 国际公布： WO2012/143964 WO 20121026
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/495 ; H01L25/07 ; H01L23/00 ; H01L23/31 ; H02K11/00 ; H02M7/537 ; B60L11/18 ; B60L15/00
摘要：
Provided is a semiconductor device including: a first MOS-FET (21) joined to a first base plate (11) via solder (61); a second MOS-FET (22) joined to a second base plate (12) via solder (64); a first lead (31) joining the first base plate (11) and the second MOS-FET (22); and a second lead (32) joining the second MOS-FET (22) and a current path member (13) that gives and receives current flowing through the MOS-FETs (21, 22) to and from the outside. The second base plate (12) is more rigid than both the leads (31, 32), a boundary line (D-D) intersects the second base plate (12) without intersecting both the leads (31, 32), the boundary line including a gap portion (52) along which both the MOS-FETs (21, 22) are opposed to each other, extending in the direction in which both the MOS-FETs (21, 22) are not opposed to each other.
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