发明授权
- 专利标题： Super junction structure semiconductor device based on a compensation structure including compensation layers and a fill structure
- 专利标题（中）： 基于包括补偿层和填充结构的补偿结构的超结结构半导体器件
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申请号： US13874965申请日： 2013-05-01
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公开(公告)号： US09117694B2公开(公告)日： 2015-08-25
- 发明人: Franz Hirler , Hans Weber , Stefan Gamerith , Armin Willmeroth
- 申请人： Infineon Technologies Austria AG
- 申请人地址： AT Villach
- 专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人地址： AT Villach
- 代理机构： Murphy, Bilak & Homiller, PLLC
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/10 ; H01L29/06 ; H01L29/78
摘要：
A super junction semiconductor device includes strip structures between mesa regions that protrude from a base section in a cell area. Each strip structure includes a compensation structure with a first and a second section inversely provided on opposing sides of a fill structure. Each section includes a first compensation layer of a first conductivity type and a second compensation layer of a complementary second conductivity type. The strip structures extend into an edge area surrounding the cell area. In the edge area the strip structures include end sections. The end sections may be modified to enhance break down voltage characteristics, avalanche ruggedness and commutation behavior.
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