Invention Grant
- Patent Title: Thin film transistor and method of manufacturing the same
- Patent Title (中): 薄膜晶体管及其制造方法
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Application No.: US14330859Application Date: 2014-07-14
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Publication No.: US09117708B2Publication Date: 2015-08-25
- Inventor: Jung-Bae Kim , Bo-Yong Chung , Hae-Yeon Lee , Yong-Jae Kim
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Yongin
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2013-0086426 20130723
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L27/12 ; H01L29/786 ; H01L21/16 ; H01L21/00

Abstract:
A thin film transistor includes a substrate, a gate electrode, a buffer layer, a gate insulating layer, an active layer, an etching stop layer, a source electrode and a drain electrode. The gate electrode is formed on the substrate. The buffer layer partially covers both side portions of the gate electrode. The gate insulating layer covers the gate electrode and the buffer layer. The active layer is formed on the gate insulating layer. The etching stop layer is formed on the active layer, and has a first opening and a second opening on the active layer. The source electrode is formed on the etching stop layer, and contacts with the active layer through the first opening. The drain electrode is formed on the etching stop layer, and is contacted with the active layer through the second opening.
Public/Granted literature
- US20150028327A1 THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-01-29
Information query
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