Various embodiments provide electrostatic discharge protection structures and methods for forming the same. An exemplary structure can include a semiconductor chip including a through hole. The structure can further include a through silicon via (TSV) structure disposed within the through hole and passing through the semiconductor chip. The TSV structure can have a first surface and a second surface. The structure can further include a tunneling dielectric layer disposed on the first surface of the TSV structure. The tunneling dielectric layer can have a surface area covering a top view surface area of the TSV structure and a surface portion of the semiconductor chip surrounding the TSV structure. Yet further, the structure can include a metal material discretely dispersed in the tunneling dielectric layer, a first electrode disposed on the tunneling dielectric layer, and a second electrode disposed on the second surface of the TSV structure.