发明授权
US09117842B2 Methods of forming contacts to source/drain regions of FinFET devices
有权
形成与FinFET器件的源极/漏极区的接触的方法
- 专利标题： Methods of forming contacts to source/drain regions of FinFET devices
- 专利标题（中）： 形成与FinFET器件的源极/漏极区的接触的方法
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申请号： US13798429申请日： 2013-03-13
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公开(公告)号： US09117842B2公开(公告)日： 2015-08-25
- 发明人: Andy C. Wei , Shao Ming Koh
- 申请人： GLOBALFOUNDRIES Inc.
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Amerson Law Firm, PLLC
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L29/66 ; H01L21/8234 ; H01L21/8238 ; H01L21/84
摘要：
In one example, the method disclosed herein includes forming at least one fin for a FinFET device in a semiconducting substrate, performing at least one process operation to form a region in the at least one fin that contains a metal diffusion inhibiting material, depositing a layer of metal on the region in the at least one fin and forming a metal silicide region on the at least one fin.
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