发明授权
- 专利标题: Semiconductor devices using air spaces to separate conductive structures and methods of manufacturing the same
- 专利标题(中): 使用空气空间来分离导电结构的半导体器件及其制造方法
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申请号: US14020252申请日: 2013-09-06
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公开(公告)号: US09123550B2公开(公告)日: 2015-09-01
- 发明人: Nak-jin Son
- 申请人: Nak-jin Son
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel Sibley & Sajovec, P.A.
- 优先权: KR10-2012-0102269 20120914
- 主分类号: H01L21/70
- IPC分类号: H01L21/70 ; H01L29/06 ; H01L21/764 ; H01L27/108 ; H01L21/768
摘要:
A semiconductor device includes a substrate, a conductive pattern (e.g., a contact plug) on an active region of the substrate and having respective first and second sidewalls on opposite first and second sides of the conductive pattern, and first and second conductive lines (e.g., bit lines) on the substrate on respective ones of the first and second sides of conductive pattern and separated from the respective first and second sidewalls by asymmetric first and second air spaces.
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