发明授权
- 专利标题： Method of forming contact structure of gate structure
- 专利标题（中）： 形成栅极结构接触结构的方法
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申请号： US14157576申请日： 2014-01-17
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公开(公告)号： US09123563B2公开(公告)日： 2015-09-01
- 发明人: Audrey Hsiao-Chiu Hsu , Fu-Kai Yang , Mei-Yun Wang , Hsien-Cheng Wang , Shih-Wen Liu , Hsin-Ying Lin
- 申请人： Taiwan Semiconductor Manufacturing Company Limited
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人地址： TW Hsinchu
- 代理机构： Jones Day
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L27/088 ; H01L21/311 ; H01L21/321 ; H01L23/532 ; H01L21/3205 ; H01L21/768 ; H01L21/263 ; H01L21/8234 ; H01L29/66 ; H01L29/49
摘要：
A method of forming a contact structure of a gate structure is provided. In the method, an oxidation layer and a first sidewall layer disposed between a first metal gate and a second metal gate are etched to expose an underlying silicon substrate. A silicide portion defined by a contact profile is deposited in the exposed portion of the silicon substrate. A second sidewall layer substantially covers the first sidewall layer and at least partially covering the silicide portion is formed after depositing the silicide portion. A metal glue layer is deposited around the first metal gate and the second metal gate defining a trench above the silicide portion. A metal plug is deposited within the trench.
公开/授权文献
- US20150206872A1 METHOD OF FORMING CONTACT STRUCTURE OF GATE STRUCTURE 公开/授权日：2015-07-23
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