Invention Grant
US09123565B2 Masks formed based on integrated circuit layout design having standard cell that includes extended active region
有权
基于集成电路布局设计形成的掩模，具有包括扩展活动区域的标准单元
- Patent Title: Masks formed based on integrated circuit layout design having standard cell that includes extended active region
- Patent Title (中): 基于集成电路布局设计形成的掩模，具有包括扩展活动区域的标准单元
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Application No.: US13779104Application Date: 2013-02-27
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Publication No.: US09123565B2Publication Date: 2015-09-01
- Inventor: Lee-Chung Lu , Li-Chun Tien , Hui-Zhong Zhuang , Chang-Yu Wu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L27/092 ; H01L27/02
Abstract:
An integrated circuit layout that includes a first standard cell having a first transistor region and a second transistor region; a second standard cell having a third transistor region and a fourth transistor region. The first and second standard cells adjoin each other at side boundaries thereof and the first transistor region and the third transistor region are formed in a first continuous active region, and the second transistor region and the fourth transistor region are formed in a second continuous region.
Public/Granted literature
- US20140183647A1 INTEGRATED CIRCUIT LAYOUT DESIGN Public/Granted day:2014-07-03
Information query
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