发明授权
US09123651B2 Dense oxide coated component of a plasma processing chamber and method of manufacture thereof
有权
等离子体处理室的密集氧化物涂层组件及其制造方法
- 专利标题： Dense oxide coated component of a plasma processing chamber and method of manufacture thereof
- 专利标题（中）： 等离子体处理室的密集氧化物涂层组件及其制造方法
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申请号： US13851605申请日： 2013-03-27
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公开(公告)号： US09123651B2公开(公告)日： 2015-09-01
- 发明人: Hong Shih , Lin Xu , John Michael Kerns , William Charles , John Daugherty , Sivakami Ramanathan , Russell Ormond , Robert G. O'Neill , Tom Stevenson
- 申请人： Lam Research Corporation
- 申请人地址： US CA Fremont
- 专利权人： LAM RESEARCH CORPORATION
- 当前专利权人： LAM RESEARCH CORPORATION
- 当前专利权人地址： US CA Fremont
- 代理机构： Buchanan, Ingersoll & Rooney PC
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065 ; H01L21/02 ; C25D11/02 ; C23C16/44
摘要：
A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.
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