发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US13950442申请日： 2013-07-25
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公开(公告)号： US09123720B2公开(公告)日： 2015-09-01
- 发明人: Masayuki Katagiri , Yuichi Yamazaki , Tadashi Sakai , Naoshi Sakuma , Mariko Suzuki
- 申请人： Kabushiki Kaisha Toshiba
- 申请人地址： JP Minato-ku
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Minato-ku
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2012-235546 20121025
- 主分类号： H01L23/532
- IPC分类号： H01L23/532 ; H01L23/522 ; H01L21/768 ; H01L51/00 ; C01B31/02 ; H01L51/44 ; H01L29/06 ; H01L29/41
摘要：
A semiconductor device of an embodiment includes: a substrate on which a semiconductor circuit is formed; an interlayer insulating film in which a contact hole is formed on the substrate; a catalyst metal film on a side wall of the contact hole; catalyst metal particles on a bottom of the contact hole; graphene on the catalyst metal film; and carbon nanotubes, which penetrates the contact hole, on the catalyst metal particles.
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