Invention Grant
US09123730B2 Semiconductor device having through silicon trench shielding structure surrounding RF circuit
有权
半导体器件具有通过围绕RF电路的硅沟槽屏蔽结构
- Patent Title: Semiconductor device having through silicon trench shielding structure surrounding RF circuit
- Patent Title (中): 半导体器件具有通过围绕RF电路的硅沟槽屏蔽结构
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Application No.: US13939184Application Date: 2013-07-11
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Publication No.: US09123730B2Publication Date: 2015-09-01
- Inventor: Chien-Li Kuo , Yung-Chang Lin , Ming-Tse Lin , Kuei-Sheng Wu , Chia-Fang Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L23/58 ; H01L23/00 ; H01L23/48 ; H01L23/66
Abstract:
The present invention provides a semiconductor device with a shielding structure. The semiconductor device includes a substrate, an RF circuit, a shielding structure and an interconnection system. The substrate includes an active side and a back side. The RF circuit is disposed on the active side of the substrate. The shielding structure is disposed on the active side and encompasses the RF circuit. The shielding structure is grounded. The shielding structure includes a shielding TST which does not penetrate through the substrate. The interconnection system is disposed on the active side of the substrate. The interconnection system includes a connection unit providing a signal to the RF circuit.
Public/Granted literature
- US20150014828A1 Semiconductor Device Having Shielding Structure Public/Granted day:2015-01-15
Information query
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