Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14201373Application Date: 2014-03-07
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Publication No.: US09123744B1Publication Date: 2015-09-01
- Inventor: Chin-I Liao , Sheng-Hsu Liu
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/66 ; H01L29/78 ; H01L21/02 ; H01L29/16 ; H01L29/161 ; H01L29/24
Abstract:
A method for fabricating a semiconductor device is described. A spacer is formed on a sidewall of a fin structure. A portion of the fin structure is removed to form a cavity exposing at least a portion of the inner sidewall of the spacer. An epitaxy process is performed based on the remaining fin structure to form a semiconductor layer that has a shovel-shaped cross section including: a stem portion in the cavity, and a shovel plane portion contiguous with the stem portion. A semiconductor device is also described, which includes the spacer, the remaining fin structure and the semiconductor layer that are mentioned above.
Public/Granted literature
- US20150255576A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2015-09-10
Information query
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