发明授权
- 专利标题： Nonvolatile semiconductor memory device and manufacturing method thereof
- 专利标题（中）： 非易失性半导体存储器件及其制造方法
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申请号： US14195022申请日： 2014-03-03
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公开(公告)号： US09123747B2公开(公告)日： 2015-09-01
- 发明人: Takeshi Sonehara , Takeshi Murata , Junya Fujita , Fumiki Aiso , Saku Hashiura
- 申请人： KABUSHIKI KAISHA TOSHIBA
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Patterson & Sheridan, LLP
- 优先权： JP2013-166588 20130809
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L29/66 ; H01L21/28 ; H01L27/115 ; H01L29/51
摘要：
According to one embodiment, a plurality of memory cell transistors including a floating gate and a control gate and a plurality of peripheral circuit transistors including a lower electrode portion and an upper electrode portion are included. The floating gate includes a first polysilicon region, and the lower electrode includes a second polysilicon region. The first polysilicon region is a p-type semiconductor in which boron is doped, and the second polysilicon region is an n-type semiconductor in which phosphorus and boron are doped.
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