Invention Grant
US09123787B2 Through-silicon via unit cell with keep out zones and center point aligned probe pad, and method of forming
有权
通过单晶电池的通硅保护区和中心点对准探针焊盘，以及成型方法
- Patent Title: Through-silicon via unit cell with keep out zones and center point aligned probe pad, and method of forming
- Patent Title (中): 通过单晶电池的通硅保护区和中心点对准探针焊盘，以及成型方法
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Application No.: US14028729Application Date: 2013-09-17
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Publication No.: US09123787B2Publication Date: 2015-09-01
- Inventor: Himani S. Kamineni , Ramakanth Alapati , Maria Balicka
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GlobalFoundries Inc.
- Current Assignee: GlobalFoundries Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams Morgan, P.C.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/498 ; G06F17/50
Abstract:
Exemplary embodiments of the present invention provide a V0 via unit cell with multiple keep out zones. The keep out zones are oriented concentrically and provide support for multiple sizes of through-silicon vias (TSVs). An off-center alignment between the V0 via unit cell and a probe pad is used to improve contact between the V0 vias and a probe pad. During a chip redesign, the TSV size may be changed without the need to revise the V0 mask.
Public/Granted literature
- US20150076706A1 THROUGH-SILICON VIA UNIT CELL AND METHODS OF USE Public/Granted day:2015-03-19
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