Invention Grant
US09123822B2 Split gate non-volatile flash memory cell having a silicon-metal floating gate and method of making same
有权
具有硅金属浮动栅极的分离栅极非易失性闪存单元及其制造方法
- Patent Title: Split gate non-volatile flash memory cell having a silicon-metal floating gate and method of making same
- Patent Title (中): 具有硅金属浮动栅极的分离栅极非易失性闪存单元及其制造方法
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Application No.: US13958483Application Date: 2013-08-02
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Publication No.: US09123822B2Publication Date: 2015-09-01
- Inventor: Jong-Won Yoo , Alexander Kotov , Yuri Tkachev , Chien-Sheng Su
- Applicant: Silicon Storage Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: Silicon Storage Technology, Inc.
- Current Assignee: Silicon Storage Technology, Inc.
- Current Assignee Address: US CA San Jose
- Agency: DLA Piper LLP (US)
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L29/66 ; H01L21/28 ; H01L29/423 ; H01L27/115
Abstract:
A non-volatile memory cell includes a substrate of a first conductivity type with first and second spaced apart regions of a second conductivity type, forming a channel region therebetween. A select gate is insulated from and disposed over a first portion of the channel region which is adjacent to the first region. A floating gate is insulated from and disposed over a second portion of the channel region which is adjacent the second region. Metal material is formed in contact with the floating gate. A control gate is insulated from and disposed over the floating gate. An erase gate includes a first portion insulated from and disposed over the second region and is insulated from and disposed laterally adjacent to the floating gate, and a second portion insulated from and laterally adjacent to the control gate and partially extends over and vertically overlaps the floating gate.
Public/Granted literature
- US20150035040A1 Split Gate Non-volatile Flash Memory Cell Having A Silicon-Metal Floating Gate And Method Of Making Same Public/Granted day:2015-02-05
Information query
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