A method for manufacturing a photoelectric conversion device including a first process where a plurality of pixel electrodes are formed on a dielectric layer; a second process where a light receiving layer that includes an organic material is formed on the plurality of pixel electrodes; and a third process where a counter electrode is formed on the light receiving layer. The first process includes a film forming process of a pixel electrode material on the dielectric layer; a patterning process of the film of the pixel electrode material; and a heating process for heating the substrate at 270° C. after the patterning process. Such process forming a photoelectric conversion device of a solid-state imaging device which also includes a signal reading circuit formed on the substrate, the signal reading circuit capable of reading out the signal according to a quantity of electric charges collected in the first electrode.