Invention Grant
- Patent Title: Error correction code for unidirectional memory
- Patent Title (中): 单向存储器的纠错码
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Application No.: US13846538Application Date: 2013-03-18
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Publication No.: US09124301B2Publication Date: 2015-09-01
- Inventor: Christophe Laurent , Paolo Amato , Marco Sforzin , Corrado Villa
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: G11C29/00
- IPC: G11C29/00 ; H03M13/29 ; G06F11/10

Abstract:
A memory array and a method of writing to a unidirectional non-volatile storage cell are disclosed whereby a user data word is transformed to an internal data word and written to one or more unidirectional data storage cells according to a cell coding scheme. A check word may be generated that corresponds to the internal data word. In some embodiments, the check word may be generated by inverting one or more bits of an intermediate check word. Other embodiments may be described and claimed.
Public/Granted literature
- US20130283121A1 ERROR CORRECTION CODE FOR UNIDIRECTIONAL MEMORY Public/Granted day:2013-10-24
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