Invention Grant
- Patent Title: Target supply device and EUV light generation chamber
- Patent Title (中): 目标供应装置和EUV发光室
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Application No.: US14159909Application Date: 2014-01-21
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Publication No.: US09125285B2Publication Date: 2015-09-01
- Inventor: Hiroshi Umeda
- Applicant: GIGAPHOTON INC.
- Applicant Address: JP Tochigi
- Assignee: GIGAPHOTON INC.
- Current Assignee: GIGAPHOTON INC.
- Current Assignee Address: JP Tochigi
- Agency: McDermott Will & Emery LLP
- Priority: JP2013-012320 20130125
- Main IPC: H05G2/00
- IPC: H05G2/00

Abstract:
A target supply device may include a tank including a nozzle, a first electrode disposed within the tank, a first potential setting unit configured to set a potential at the first electrode to a first potential, a second electrode provided with a first through-hole and disposed so that a center axis of the nozzle is positioned within the first through-hole, a second potential setting unit configured to set a potential at the second electrode to a second potential that is different from the first potential, and a charge neutralization unit configured to neutralize a charge of the target material that passes through a first region located between the second electrode and the plasma generation region.
Public/Granted literature
- US20140209819A1 TARGET SUPPLY DEVICE AND EUV LIGHT GENERATION CHAMBER Public/Granted day:2014-07-31
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