Invention Grant
US09128341B2 Visible sensing transistor, display panel and manufacturing method thereof
有权
可见感测晶体管,显示面板及其制造方法
- Patent Title: Visible sensing transistor, display panel and manufacturing method thereof
- Patent Title (中): 可见感测晶体管,显示面板及其制造方法
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Application No.: US14251282Application Date: 2014-04-11
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Publication No.: US09128341B2Publication Date: 2015-09-08
- Inventor: Dae-Cheol Kim , Sung-Ryul Kim , Yun-Jong Yeo , Hong-Kee Chin , Ki-Hun Jeong
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Yongin
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2010-0077962 20100812
- Main IPC: H01L29/04
- IPC: H01L29/04 ; G02F1/1368 ; H01L31/113 ; H01L31/12 ; G02F1/1333 ; G02F1/133

Abstract:
A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent.
Public/Granted literature
- US20140218644A1 VISIBLE SENSING TRANSISTOR, DISPLAY PANEL AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-08-07
Information query
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