Invention Grant
US09128341B2 Visible sensing transistor, display panel and manufacturing method thereof 有权
可见感测晶体管,显示面板及其制造方法

Visible sensing transistor, display panel and manufacturing method thereof
Abstract:
A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent.
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