Invention Grant
- Patent Title: Semiconductor device and driving method thereof
- Patent Title (中): 半导体装置及其驱动方法
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Application No.: US13900140Application Date: 2013-05-22
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Publication No.: US09129667B2Publication Date: 2015-09-08
- Inventor: Yasuyuki Takahashi , Seiichi Yoneda
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2012-119314 20120525
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/22 ; G11C11/00

Abstract:
A semiconductor device in which a nonvolatile memory can normally operate and power saving can be performed with a P-state function, and a driving method of the semiconductor device are provided. The semiconductor device includes: a first circuit configured to control a state including a driving voltage and a clock frequency of a processor core; a first memory circuit and a second memory circuit which store state data; a second circuit generating a power supply voltage and a third circuit generating a clock which are electrically connected to the first circuit; and the processor core electrically connected to the second circuit and the third circuit through a switch. The processor cores includes: a volatile memory; and a nonvolatile memory transmitting and receiving data to/from the first memory.
Public/Granted literature
- US20130315011A1 SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF Public/Granted day:2013-11-28
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