Invention Grant
US09129667B2 Semiconductor device and driving method thereof 有权
半导体装置及其驱动方法

Semiconductor device and driving method thereof
Abstract:
A semiconductor device in which a nonvolatile memory can normally operate and power saving can be performed with a P-state function, and a driving method of the semiconductor device are provided. The semiconductor device includes: a first circuit configured to control a state including a driving voltage and a clock frequency of a processor core; a first memory circuit and a second memory circuit which store state data; a second circuit generating a power supply voltage and a third circuit generating a clock which are electrically connected to the first circuit; and the processor core electrically connected to the second circuit and the third circuit through a switch. The processor cores includes: a volatile memory; and a nonvolatile memory transmitting and receiving data to/from the first memory.
Public/Granted literature
Information query
Patent Agency Ranking
0/0