Invention Grant
US09129708B2 Integrated circuit with separate supply voltage for memory that is different from logic circuit supply voltage
有权
具有不同于逻辑电路电源电压的存储器的单独电源电压的集成电路
- Patent Title: Integrated circuit with separate supply voltage for memory that is different from logic circuit supply voltage
- Patent Title (中): 具有不同于逻辑电路电源电压的存储器的单独电源电压的集成电路
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Application No.: US14467633Application Date: 2014-08-25
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Publication No.: US09129708B2Publication Date: 2015-09-08
- Inventor: Brian J. Campbell , Vincent R. von Kaenel , Daniel C. Murray , Gregory S. Scott , Sribalan Santhanam
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.
- Agent Lawrence J. Merkel
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/419 ; G11C5/14 ; G11C8/08 ; G11C11/417 ; G11C7/12

Abstract:
In one embodiment, an integrated circuit includes at least one logic circuit supplied by a first supply voltage and at least one memory circuit coupled to the logic circuit and supplied by a second supply voltage. The memory circuit is configured to be read and written responsive to the logic circuit even if the first supply voltage is less than the second supply voltage during use. In another embodiment, a method includes a logic circuit reading a memory cell, the logic circuit supplied by a first supply voltage; and the memory cell responding to the read using signals that are referenced to the first supply voltage, wherein the memory cell is supplied with a second supply voltage that is greater than the first supply voltage during use.
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