发明授权
US09129709B2 Memory system comprising non-volatile memory device and related method of operation
有权
包括非易失性存储器件的存储器系统和相关的操作方法
- 专利标题： Memory system comprising non-volatile memory device and related method of operation
- 专利标题（中）： 包括非易失性存储器件的存储器系统和相关的操作方法
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申请号： US13547441申请日： 2012-07-12
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公开(公告)号： US09129709B2公开(公告)日： 2015-09-08
- 发明人: Dong-Hun Kwak
- 申请人： Dong-Hun Kwak
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR10-2011-0101037 20111005
- 主分类号： G11C7/10
- IPC分类号： G11C7/10 ; G11C11/56 ; G11C16/34 ; G11C16/06 ; G11C16/26 ; G11C16/10 ; G11C16/04
摘要：
A nonvolatile memory device includes a first memory region and a second memory region. The nonvolatile memory device is programmed by storing program data in the first memory region, performing coarse programming and fine programming to store the program data in the second memory region, and in response to a read request, accessing the program data from the first memory region or the second memory region according to a fine program flag indicating whether the coarse programming has been completed.
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