Invention Grant
- Patent Title: Method of fabricating graphene nano device
- Patent Title (中): 制造石墨烯纳米器件的方法
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Application No.: US14500764Application Date: 2014-09-29
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Publication No.: US09129882B2Publication Date: 2015-09-08
- Inventor: Eun Kyoung Jeon , Hyun Seo Kang , Kwon-Seob Lim , Hyoung Jun Park , Keo-Sik Kim , Jeong Eun Kim , Young Sun Kim , Young Soon Heo
- Applicant: Electronics and Telecommunications Research Institute
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2014-0010209 20140128
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L29/16 ; H01L21/283 ; H01L21/306 ; H01L21/308

Abstract:
Provided is a method of fabricating a graphene nano device. The method includes forming a first metal mask pattern on a substrate on which a graphene layer is formed, and forming a graphene pattern by performing an etching process on the graphene layer using the first metal mask pattern as an etching mask. The forming of the first metal mask pattern includes forming a first adhesive layer on the graphene layer, disposing the first metal mask pattern prepared in advance on the first adhesive layer, and heating the first adhesive layer to attach the first metal mask pattern on the substrate.
Public/Granted literature
- US20150214305A1 METHOD OF FABRICATING GRAPHENE NANO DEVICE Public/Granted day:2015-07-30
Information query
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